sot-89 plastic-encapsulate transistors transistor pnp features low speed switching maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -continuous -3 a p c collector power dissipation 0.5 w r ? ja thermal resistance, junction to ambient 250 /w t j junction temperature 150 t stg storage temperature -55~ 150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100 a ,i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c = -10ma , i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e = -100 a,i c =0 -5 v collector cut-off current i cbo v cb = -40v, i e =0 -1 a collector cut-off current i ceo v ce =-30v, i b =0 -10 a emitter cut-off current i ebo v eb =-6v, i c =0 -1 a dc current gain h fe v ce = -2v, i c = -1a 60 400 collector-emitter saturation voltage v ce(sat) i c =-2a, i b = -0.2a -0.5 v base-emitter saturation voltage v be(sat) i c =-2a, i b = -0.2a -1.5 v transition frequency f t v ce = -5v, i c =-0.1a f =10mhz 80 mhz classification of h fe rank r o y gr range 60-120 100-200 160-320 200-400 1 2 3 sot-89 1. base 2. colletor 3. emitter 2012- 0 willas electronic corp. B772 preliminary
outline drawing dimensions in inches and (millimeters) sot-89 rev.c .047(1.2) .031(0.8) .102(2.60) .091(2.30) .181(4.60) .173(4.39) .061ref (1.55)ref .023(0.58) .016(0.40) .060typ (1.50)typ .118typ (3.0)typ .197(0.52) .013(0.32) .017(0.44) .014(0.35) .063(1.60) .055(1.40) .154(3.91) .167(4.25) 2012- 0 willas electronic corp. sot-89 plastic-encapsulate transistors B772 preliminary
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